Dekri teren
Nouvo pwodwi 100W 808nm Single Bar Laze Chip
Aplikasyon yo
Endistri
Laze Radar
Ekspozisyon
Medikal / bote machin
Defans / Laze Probing / Tracking
Eneji
Ekleraj
Rechech syantifik
Spesifikasyon
Atik No.: LC808SB100
Atik Non: 100W 808nm Single Bar Laze Chip
| optik | min | Jip | Maks | Inite |
| Longedonn santral | 808 | nm | ||
| Pwodiksyon pouvwa | 100 | W | ||
| Mod travay | ekipaj | |||
| Laje Spectrum | 3 | nm | ||
| Kantite Emitter | 19 | |||
| Laje emetris | 150 | μm | ||
| Emetter pitch | 500 | μm | ||
| Konplete fakte | 30 | % | ||
| Kafe Laje | 10000 | μm | ||
| Longe kavite | 2000 | μm | ||
| epese | 150 | μm | ||
| Vit Aks Divergence (FWHM) | 45 | Deg | ||
| Ralanti Divergence Aks (FWHM) | 8 | Deg | ||
| Mod polarizasyon | DIS | |||
| Pant Efikasite | 1.23 | W/A | ||
| Elektrik | ||||
| Opere kouran iop | 95 | 105 | Yon | |
| Papot Ith aktyel | 14 | Yon | ||
| Opere voltaj Vop | 1.65 | 1.85 | v | |
| Efikasite konvesyon | 64 | % | ||
| Temik | ||||
| Tanperati opere | 15 | 25 | 35 | °C |
| Tanperati ond tanperati koyefisyan | 0.28 | nm / ° C |
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Hangzhou Brandnew Tech. Co, Ltd.
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Baj popilè: nouvo pwodwi 100w 808nm sel bar laze chip founise, manifaktire Lachin, faktori, wholesale, te fe nan Lachin